Integrated Systems and transformation of Microelectronics to Nanoelectronics
Abstract
Full Text:
PDFReferences
REFERENCES
"Moore's law", Encyclopedia Britannica, Encyclopædia Britannica Online, Encyclopedia Britannica Inc., 2013, Web, 14 May 2013.
Harriott, Lloyd R., “Limits of lithography,” Proceedings of the IEEE, vol.89, no.3, pp.366-374, Mar 2001.
Frank D.J, Dennard R.H, Nowak E, Solomon P.M, Taur Y, Hon Sum Philip Wong, “Device scaling limits of Si MOSFETs and their application dependencies,” Proceedings of the IEEE, vol. 89, no. 3, pp. 259-288, 2001. [4] P.F.Schmidt and C. W. Pearce, “A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing Process,” Journal of the Electrochemical society, vol. 128, no. 3, pp. 630-637, March 1981.
R.C. Jaeger, “Microelectronic Circuit Design”, Boston, MA,WCB/McGraw-Hill, 1997.
Behzad Razavi “Design of Analog CMOS Integrated Circuits” Tata
McGraw Hill Edition 2002, 21st reprint 2011
Bin Yu; Haihong Wang; Riccobene, C.; Qi Xiang; Ming-Ren Lin, "Limits of gate-oxide scaling in nano-transistors," VLSI Technology, 2000, Digest of Technical Papers, 2000 Symposium, vol.90, no.91, pp.13-15 June 2000. [8]. Zhou, C.; Kumar, A. & Ryu, K., “Small Wonder: The Exciting World of Carbon Nanotubes”, IEEE Nanotechnology Magazine, vol. 1, No. 1, pp. 13-17, 2007.
. Baughman, R.H.; Zakhidov, A.A. & de Heer, W.A., “Carbon Nanotubes – The Route Toward Applications,” Science, vol. 297, no. 5582, pp. 787-792, 2002.
. P.J. McEuen, “Single-Wall Carbon Nanotubes,” Physics World, vol.13, no. 6, pp 31-36, 2000.
S. Iijima, “Helical Microtubules of Graphitic Carbon,” Nature, vol.354, no. 6341, pp. 56-58, 1991.
T. Raja, V.D. Agrawal, M.L. Bushnell, “A Tutorial on the Emerging Nanotechnology Devices,” Proc. 17th International Conference. VLSI Design, pp 343-360, 2004.
A.P. Graham, “How Do Carbon Nanotubes Fit into the Semiconductor Roadmap?” Applied Physics A Materials Science & Processing, vol. 80, no. 6, pp. 1141-1155, 2005.
.A.Bachtold, “Logic Circuits with Carbon Nanotube Transistors,”
Science, vol. 294, pp. 1317-1320, 2001.
R. Martel., “Single- and Mulitwall Carbon Nanotube Field-Effect
Transistors”, Applied Physics Letters, vol. 73, no. 17, pp. 2447-2449, 1998.
R.Krupke, “Seraration of Metallic from Semiconducting Single-Walled
Carbon Nanotubes,” Science, vol. 301, no. 5631, pp. 344-347, 2003.
Y. Cui, “Diameter-Controlled Synthesis of Single-Crystal Silicon Nanowires,” Applied Physics Letters, vol.78, no. 15, pp. 2214-2216, 2001. [18] A.M. Morales, C.M. Lieber, “A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires,” Science, vol.279, no. 5348, pp. 208-211, 1998.
. Y. Wu, P. Yang, “Germanium Nanowire Growth via Simple Vapor
Transport,” Chemistry of Materials, vol. 12, pp.605-607, 2000.
. M. Gudiksen, “Growth of Nanowire Superlattice Structures for Nanoscale Photonics and Electronics,” Letters to Nature, vol. 415,no. 6872, pp. 617-620, 2002.
. Y. Huang, “Logic Gates and Computation from Assembled Nanowire
Building Blocks,” Science, vol. 294, no. 5545, pp.1313-1316, 2001.
Y. Cui, C.M. Lieber, “Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks,” Science, vol.291, no. 5505, pp. 851-853, 2001.
.Lent, C. S., and Tougaw, P. D., “ Lines of interacting quantum-dot cells: a binary wire,” Journal of Applied Physics, 74, 6227-6233, 1993.
Hirai, Yoshihiko, Yoshida, Satoshi, Okuno, H. Fujiwara,Masaki, Tanaka, Yoshio, “Aluminum quantum dots fabrication by nano-imprint lithography,” Microprocesses and Nanotechnology Conference, 2000 International, vol., no., pp.292-293, July 2000.
M. Butts, A. DeHon, S.C. Goldstein, “Molecular Electronics: Devices, Systems and Tools for Gigagate, Gigabit Chips,” IEEE/ACM Int’l Conf. Computer Aided Design (ICCAD02), pp. 430-440, 2002.
A. Gayasen, N. Vijaykrishnan, M.J. Irwin, “Exploring Technology Alternatives for Nano-Scale FPGA Interconnects,” 42nd Proc. Design Automation Conference (DAC05), pp. 921-926, 2005.
. A K. Geim, S. Novoselov, “The rise of Graphene”, Journal of Nature
materials, vol. 6, pp. 183-191, 2007.
. K. S. Novoselov, A. K. Geim, S.V. Morozov, D. Jiang, Y. Zhang S. V. Dubonos, I. V. Grigorieva and A. A. Firsov, “Electric Field Effect in Atomically Thin Carbon Films”, Journal of Science, vol.306, pp. 666-669, October 2004.
.C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T.Li,
J. Hass, A. N. Marchenkov, E.H. Conrad, P. N. First, and W. A. de Heer,“Electronic Confinement and Coherence in Patterned Epitaxial Graphene”, Journal of Science, vol. 312, pp. 1191-1196, April 2006.
S. Banerjee, M. Sardar, N.Gayathri, A.K. Tyagi, B. Raj,“Enhanced Conductivity in Graphene Layers and at their Edges”, Journal of Applied Physics Letters, vol. 88, pp. 06211-1 – 06211-3, 2006.
. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, “Two dimensional gas of mass less Dirac fermions in graphene,” Journal of Nature, vol. 438, pp. 197 – 201, 2005.
. Majumdar, K, Murali, K.V.R.M., Bhat, N., Fengnian Xia and Yu- Ming Lin, “ High On-Off Ratio Bi layer Graphene Complementary Field Effect Transistors”, Electron Devices Meeting (IEDM) 2010 IEEE International, December 2010.
. Levente Tapaszto, Gergely Dobrik, Philippe Lambin, Laszlo P. Biro, “Tailoring the atomic structure of graphene nano ribbons by scanning tunneling microscope lithography”, Nature Nanotechnology, vol. 3, pp. 397-401, June 2008.
. Melinda Y. Han, Barbaros Ozyilmaz, Yuanbo Zhang, Philip Kim, “Energy Band-Gap Engineering of Graphene Nanoribbons”, Journal of Physical Review Letters, vol. 98, May 2007.
DOI: https://doi.org/10.37628/ijmdic.v1i1.76
Refbacks
- There are currently no refbacks.