STUDY AND IMPLEMENTATION OF INP MIS STRUCTURE AND GaAs FET DEVICES for ELECTRIC CONTROL APPLICATIONS.

Abstract

Compound semiconductors are well known for its high speed due to its higher mobility. Indium Phosphide and Gallium Arsenide are the compound semiconductor material considered in this paper for its study and characterization. Indium Phosphide MIS devices can be fabricated and its characteristics are studied. Here Indium Phosphide MIS capacitor is used as test vehicle for fabrication of other MIS devices. We noted down its breakdown voltage and leakage current. MIS devices can be used for fabricating Bio-electrodes in Medical applications. Then we have simulated GaAs Field Effect transistor devices as switches or Inverters. The devices made up of GaAs can be used as Logical elements in Machine controlled systems. We considered two examples of Machine Controlled system and can be modeled as Logical elements. GaAs NOT, NAND, NOR Circuits are drawn and simulated and its characteristics are noted down. We conclude that Compound semiconductor devices have higher response time and less power compared to silicon.