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A High Frequency Design Approach and Feasibility Study of NMOS FET Based W-band (90.0 GHz–100.0 GHz) SPDT Switch using 130 nm SiGe Based BiCMOS Technology

Shib sankar singh, Divya Kumar Garg, Madhav kumar garg

Abstract


This paper present high frequency design approach and feasibility study of NMOS (N-channel metaloxide semiconductor) FET based W-band (90.0 GHz-100.0 GHz) SPDT switch. This switch has design using 130 nm SiGe based BiCMOS (Bipolar complementary metal oxide semiconductor) technology. This switch has design using travelling wave technique, which has very popular technique at millimeter wave and Tera Gigahertz frequency range. The travelling wave technique uses shunt loaded switch FET and transmission line. The optimal value of NMOS FET and transmission lineshave selected for designing of SPDT (Single Pole Double Thru) switch. The schematic designed SPDT switch achieved better than-3.9 dB of insertion loss, better than -19.5 dB of isolation, better than–15.0 dB of input return loss and better than-15.0 dB of output return loss in simulation at W- band (90.0 GHz-100.0 GHz). This SPDT switch achieved +9.465 dBm of linear output power in simulation at 95.0 GHz and it can handle up to +24 dBm of Input power in simulation. This paper introduces new simulation parameter such as %THD for switch design purpose. This switch achieved less than +3.6% of THD (Total harmonic distortion) at “on” arm of switch and insignificant %THD a t “o ff”
arm of switch.


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References


Chien-Chang Chou, Shih-Chiao Huang, Wen-Chian Lai, H.-C. Kuo and Huey-Ru Chuang. Design of W- Band High-Isolation T/R Switch. Proceedings of the 45th European Microwave Conference, pp 1084-1087

Ekaterina Laskin, Pascal Chevalier, Member, Alain Chantre, Bernard Sautreuil, and Sorin P. Voinigescu,”165-GHz Transceiver in SiGe Technology. IEEE Journal of Solid-State Circuits, Vol. 43, No. 5, May 2008

Chien-Chang Chou, Shih-Chiao Huang, Wen-Chian Lai, H.-C. Kuo, Huey-Ru Chuang. Design of W-Band High-Isolation T/R Switch. European Microwave Conference, Sep. 2015, pp. 1084 – 1087

T. Quémerais, L. Moquillon, J.-M. Fournier1, and P. Benech. A SPDT Switch in a standard 45 nm CMOS process for 94 GHz Applications”. European. Microwave Conference, Sep. 2010, pp. 425–42

S. F. Chao, H. Wang, C.-Y. Su, and J. G. J. Chern. A 50 to 94-GHz CMOS SPDT switch using Travelling-wave concept. IEEE Microwave Wireless Component. Letter. vol. 17, no. 2, pp. 130–132, Feb. 2007

T. Kosugi, M. Tokumitsu, K. Murata, T. Enoki, H. Takahashi, A. Hirata, and T. Nagatsuma. 120-GHz TX/RX waveguide modules for 10-Gbit/s wireless link system. 2006 IEEE Compound Semicond. Integrated Circuit Symp., San Antonio, TX, Nov. 2006, pp. 25–28.

K. K. O, C. Cao, E.-Y. Seok, and S. Sankaran. CMOS millimeter wave signal sources and detectors. IEEE Int. Symp. Circuits Syst., New Orleans, LA, May 2007, pp. 2614–2617.

P. Roux, Y. Baeyens, O. Wohlgemuth, and Y. Chen. A monolithic integrated 180 GHz SiGe HBT push-push oscillator. 2005 13th Eur. Gallium Arsenide Other Compound Semicond. Application Symp., Paris, France, Oct. 2005, pp. 341–343.


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