Improvement in Stability of RF Power Amplifier in X-band Frequencies Using Ga-As MESFET

Authors

  • Pramod Sharma Department of Electrical Engineering, BSA College of Engineering, Mathura,
  • Upendra Kumar Gupta Department of Electrical Engineering, BSA College of Engineering, Mathura,
  • Ravi Prakash Dwivedi Department of Electrical Engineering, BSA College of Engineering, Mathura,

DOI:

https://doi.org/10.37628/jrfd.v1i1.257

Abstract

This paper concern with the design and simulation of various techniques used to design a RF power amplifier: real frequency technique (RFT), combining technique and S-parameter analysis. In this paper we have to use S-Parameter analysis within X-band frequencies 8-12 GHz, and this analysis of S-Parameters is proven by advanced designed system tool (ADS). By optimizing the DC-biasing circuit and using proper values of passive components, dielectric constant we achieved better performance, which has better stability and improved magnitude of S21. Keywords: Maximum gain, S-parameter, stability

Author Biographies

  • Pramod Sharma, Department of Electrical Engineering, BSA College of Engineering, Mathura,
    Department of Electrical Engineering, BSA College of Engineering, Mathura,
  • Upendra Kumar Gupta, Department of Electrical Engineering, BSA College of Engineering, Mathura,
    Department of Electrical Engineering, BSA College of Engineering, Mathura,
  • Ravi Prakash Dwivedi, Department of Electrical Engineering, BSA College of Engineering, Mathura,
    Department of Electrical Engineering, BSA College of Engineering, Mathura,

References

Ayasli Y. Microwave switching with GaAsFETs. Microwave J. 1982; 25: 61–74p.

Gutmann R. J. IEEE Transactions on Microwave Theory and Techniques. 1987; 35(5).

Zhong Z., Guo Y.X. IEEE Transactions on Microwave Theory and Techniques. 2011; 59(9).

Gledhill C.S., Abulela M.F. Scattering parameter approach. IEEE Transactions on Microwave Theory, 1974 January.

Wen-Lin Jung and Jung-Hui Chiu, Stable Broadband Microwave Amplifier Design. IEEE Transactions on Microwave Theory and Techniques. 1993; 41(2).

Eccleston K. W. Microwave Amplifier Design. IEEE Transactions on Education. 2004; 47(1).

Abdul-Wahab M. S., Ali T.M. Simulation of 9-11 GHz High Power Amplifier. Journal of Engineering and Development. 2009; 13(1).

Keith H. IEEE Transactions on Microwave Theory and Techniques. 1988; 36(12).

Gutmann R.J. IEEE Transaction on Microwave Theory and Techniques. 1987; 35(5).

Niclas K.B., Wilser W.T. IEEE Transactions on Microwave Theory and Techniques. 1980; 28(4).

Slaymarker Nicholas A., Soares R. A., Turner James A. Transaction on Microwave Theory and Techniques. 1971; 24(6).

Gledhill C.S., Abulela M.F. Scattering parameter approach. IEEE Transactions on Microwave Theory. 1974 January.

Renato N., Rolf V., Werner B. Monolithic linear X-band power amplifier using a low-cost MESFET technology. IEEE MTT-S IMOC 2003.

Marian K. Kazimierczuk Wright. RF Power Amplifiers. State University, Dayton, Ohio, USA.

Pozar David M. Microwave Engineering. 4th Edn. University of Massachusetts at Amherst.

Ohtomo M. Proviso on the unconditional stability criteria for linear two ports. IEEE Transactions on Microwave Theory and Techniques. 1995; 43: 1197–200p

Downloads

Published

2022-11-01

Issue

Vol. 2 No. 1 (2016)

Section

Articles