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Improvement in Stability of RF Power Amplifier in X-band Frequencies Using Ga-As MESFET

Pramod Sharma, Upendra Kumar Gupta, Ravi Prakash Dwivedi

Abstract


This paper concern with the design and simulation of various techniques used to design a RF power amplifier: real frequency technique (RFT), combining technique and S-parameter analysis. In this paper we have to use S-Parameter analysis within X-band frequencies 8-12 GHz, and this analysis of S-Parameters is proven by advanced designed system tool (ADS). By optimizing the DC-biasing circuit and using proper values of passive components, dielectric constant we achieved better performance, which has better stability and improved magnitude of S21.

Keywords: Maximum gain, S-parameter, stability

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References


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DOI: https://doi.org/10.37628/jrfd.v1i1.257

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