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Equivalent Circuits For High Frequency Bipolar Transistors

Krishnapuram Kumar

Abstract


Two types of equivalent circuits were considered to represent small signal/linear bipolar transistor behaviour at high frequencies. Elements/Parameters of the equivalent circuits are extracted from measured S parameters using gradient method by Fletcher-Powell. Exact gradients of S parameters were determined by using gradient conversion matrix formula between two-port open circuit impedance parameters and two port scattering parameters. Good agreement between measured and simulated all the four two port S parameters were obtained for both the circuit configurations.

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References


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DOI: https://doi.org/10.37628/ijmdic.v3i1.416

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