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Numerical Simulation of GaAs based MISFET Photo detector for Optical Communication

S. Patel, P. Chakrabarti

Abstract


This paper presents a 2D numerical simulation and analysis of GaAs based MISFET photo detector. Numerical simulation of the performance of the device in dark and illuminated condition has been performed. Drain current increases with wavelength of operation and attains maximum value at 0.65 micron and there is a sharp fall beyond 0.85 micron which is higher cut off wavelength for the proposed structure. The device exhibits very low dark current is the order of 10-6 A and quantum efficiency of about 35%. We can optimize the performance of the device by changing the doping concentration and device dimensions.

Keywords: MISFET photodetector, optically controlled GaAs MISFET, quantum efficiency

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DOI: https://doi.org/10.37628/ijmdic.v2i1.220

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