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Numerical simulation of P3HT based Organic Thin Film Transistors (OTFTs)

Arun Dev Dhar Dwiwedi, Rajeev Dhar Dwivedi, Raghvendra D. Dwivedi, Sumit Vyas, P. Chakrabarti

Abstract


This paper presents numerical simulation of P3HT based organic thin film transistors using commercially available device simulation software ATLAS from Silvaco Inc. We present a model of the P3HT based OTFTs based on the tail and the deep states, which can produce well the characteristics of the P3HT based OTFTs in both the subthreshold and the above-threshold regions. Simulation includes the hopping mobility model, Poole-Frenkel mobility model, Schottky contact, and Langevin recombination model. The extracted on/off current ratio is above 103 and threshold voltage is VT=10 V and the field effect mobility is about 1.2×10-2 cm2 /Vs.

Index Terms: P3HT, OTFT, Numerical simulation, Density of defect state (DOS), Poole-Frenkel mobility model, Langevin recombination model and ATLAS

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References


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DOI: https://doi.org/10.37628/ijmdic.v1i2.120

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