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Performance Analysis and study of losses in GaAs Multi Junction Solar cells using Current and Voltage Measurements

E N Ganesh

Abstract


Lattice matched, triple-junction solar cells with the strain compensated quantum dots (QDs) in the GaAs middle cell were grown by the Metal-Organic Chemical Vapor Deposition (MOCVD). Devices with different numbers of QD layers is compared to baseline devices with no QDs. Quantum efficiency and light I-V measurements show an increase in short circuit current density and degradation of open circuit voltage for QD solar cells. The QDs do not improves the overall efficiency of the devices, and the performance degrades as more QD layers is added. The QD solar cells show improved relative radiation resistance compared to the baseline devices, but the improvement is insufficient to make up for the initial loss of performance.

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References


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DOI: https://doi.org/10.37628/ijece.v3i1.422

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