Nano-MOSFET ever horizon power electronics

Abstract

This article is study about characterization of miniaturized metal oxide semiconductor field effect transistor (MOSFET, MOS-FET, or MOS FET). MOSFET knew as well by metal oxide silicon transistor (MOS transistor, or MOS). Subscriptive issued has been a type of insulated-gate field effect transistor that has fabricated by controlled oxidation of a semiconductor, given by, silicon. Voltage of covered gate has determined electrical conductivity of device thereby descriptive issued as ability to change conductivity with amount of applied voltage, otherwise has used to amplify or switch electronic signals. Maximization of exposed surface area to subsidize issue free surface dangling bonds for utility specific purposes has secured after introduction of nano-material philosophies in constructive context. Suppression of noise after nano-MOSFET fabrication has linked to shot noise compared to thermally assisted noise. Henceforth, Fermi and Coulomb suppression after nano-configuration has adoptive issued by bias voltage, temperature and dopant concentration. Extra vicinity among atoms/molecules after nano formation of replaceable MOSFET has enhanced logic of induction originated high current-voltage abduction to scheme additional expenses to protect from short channel effects (SCEs).